GeneSiC Semiconductor(240)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Voltage | Package | Type | Series | Datasheet | Mfr | Base Product Number | Configuration | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Current | Power Dissipation (Max) | Product Status | Technology | FET Type | Voltage - Isolation | Speed | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Capacitance @ Vr, F | Voltage - Peak Reverse (Max) | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DB102G | GeneSiC Semiconductor | 0.2000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | DB102 | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB | Active | Standard | 100 V | Single Phase | 1 A | 1.1 V @ 1 A | 10 µA @ 100 V | ||||||||||||||||||||||||||
 |
G2R120MT33J | GeneSiC Semiconductor | 118.8400 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G2R™ | download | GeneSiC Semiconductor | G2R120 | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-7 | - | Active | SiCFET (Silicon Carbide) | N-Channel | 3706 pF @ 1000 V | 3300 V | - | 35A | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | 20V | +25V, -10V | |||||||||||||||||||
 |
G3R45MT17D | GeneSiC Semiconductor | 36.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G3R™ | GeneSiC Semiconductor | G3R45 | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 438W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 4523 pF @ 1000 V | 1700 V | - | 61A (Tc) | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | 15V | ±15V | ||||||||||||||||||||
|
GA20SICP12-263 | GeneSiC Semiconductor | 56.3100 |
Min: 1 Mult: 1 |
0.00000000 | 1.2 kV | Tube | - | - | download | GeneSiC Semiconductor | GA20SICP12 | - | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 20 A | Active | - | ||||||||||||||||||||||||||||
 |
GBPC2510W | GeneSiC Semiconductor | 4.2000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBPC2510 | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W | Active | Standard | 1 kV | Single Phase | 25 A | 1.1 V @ 12.5 A | 5 µA @ 1000 V | |||||||||||||||||||||||||
 |
GC2X100MPS06-227 | GeneSiC Semiconductor | 84.8200 |
Min: 1 Mult: 1 |
0.00000000 | Tube | SiC Schottky MPS™ | download | GeneSiC Semiconductor | GC2X100 | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 650 V | 1.8 V @ 50 A | 20 µA @ 650 V | -55°C ~ 175°C | 2 Independent | 209A (DC) | |||||||||||||||||||||||
 |
KBP208G | GeneSiC Semiconductor | 0.2300 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | KBP208 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP | Active | Standard | 800 V | Single Phase | 2 A | 1.1 V @ 2 A | 10 µA @ 50 V | |||||||||||||||||||||||||
 |
MBRT400100 | GeneSiC Semiconductor | 121.6500 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | Chassis Mount | Three Tower | Three Tower | Active | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100 V | 880 mV @ 200 A | 1 mA @ 20 V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |||||||||||||||||||||||||
 |
DB103G | GeneSiC Semiconductor | 1.3000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | DB103 | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB | Active | Standard | 200 V | Single Phase | 1 A | 1.1 V @ 1 A | 10 µA @ 200 V | |||||||||||||||||||||||||
 |
G3R12MT12K | GeneSiC Semiconductor | 71.7900 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | GeneSiC Semiconductor | G3R12M | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 567W (Tc) | Active | SiC (Silicon Carbide Junction Transistor) | N-Channel | 9335 pF @ 800 V | 1200 V | - | 157A (Tc) | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | 15V, 18V | +22V, -10V | |||||||||||||||||||
|
G3R45MT17K | GeneSiC Semiconductor | 36.3800 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G3R™ | download | GeneSiC Semiconductor | G3R45 | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 438W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 4523 pF @ 1000 V | 1700 V | - | 61A (Tc) | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | 15V | ±15V | |||||||||||||||||||
 |
GA50SICP12-227 | GeneSiC Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 1.2 kV | Tube | - | - | download | GeneSiC Semiconductor | - | Chassis Mount | SOT-227-4, miniBLOC | 50 A | Obsolete | - | |||||||||||||||||||||||||||||
 |
GBPC3502T | GeneSiC Semiconductor | 4.6200 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBPC3502 | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T | Active | Standard | 200 V | Single Phase | 35 A | 1.1 V @ 12.5 A | 5 µA @ 200 V | |||||||||||||||||||||||||
 |
GC50MPS33H | GeneSiC Semiconductor | 261.3900 |
Min: 1 Mult: 1 |
0.00000000 | Tube | SiC Schottky MPS™ | GeneSiC Semiconductor | Through Hole | TO-247-2 | TO-247-2 | 0 ns | Active | No Recovery Time > 500mA (Io) | - | Silicon Carbide Schottky | 3300 V | 50A (DC) | 175°C | |||||||||||||||||||||||||||
|
KBP210G | GeneSiC Semiconductor | 0.2300 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | KBP210 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP | Active | Standard | 1 kV | Single Phase | 2 A | 1.1 V @ 2 A | 10 µA @ 1000 V |
Need Help?
