GeneSiC Semiconductor(240)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Voltage | Package | Type | Series | Datasheet | Mfr | Base Product Number | Configuration | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Current | Power Dissipation (Max) | Product Status | Technology | FET Type | Voltage - Isolation | Speed | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Voltage - Peak Reverse (Max) | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
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G2R1000MT17D | GeneSiC Semiconductor | 5.9900 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G2R™ | download | GeneSiC Semiconductor | G2R1000 | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 53W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 139 pF @ 1000 V | 1700 V | - | 4A (Tc) | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 20V | +20V, -5V | ||||||||||||||||||
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G3R450MT17D | GeneSiC Semiconductor | 7.9300 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G3R™ | GeneSiC Semiconductor | G3R450 | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 88W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 454 pF @ 1000 V | 1700 V | - | 9A (Tc) | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | 15V | ±15V | ||||||||||||||||||
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GA100SICP12-227 | GeneSiC Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 1.2 kV | Tube | - | - | download | GeneSiC Semiconductor | - | Chassis Mount | SOT-227-4, miniBLOC | 100 A | Obsolete | - | |||||||||||||||||||||||||||
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GBPC2508T | GeneSiC Semiconductor | 4.2000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBPC2508 | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC | Active | Standard | 800 V | Single Phase | 25 A | 1.1 V @ 12.5 A | 5 µA @ 800 V | |||||||||||||||||||||||
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GBU8J | GeneSiC Semiconductor | 1.5700 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBU8 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Active | Standard | 600 V | Single Phase | 8 A | 1.1 V @ 8 A | 5 µA @ 600 V | |||||||||||||||||||||||
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KBP204G | GeneSiC Semiconductor | 0.2300 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | KBP204 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP | Active | Standard | 400 V | Single Phase | 2 A | 1.1 V @ 2 A | 10 µA @ 400 V | |||||||||||||||||||||||
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MBRT20060 | GeneSiC Semiconductor | 113.2500 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | Chassis Mount | Three Tower | Three Tower | Active | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60 V | 800 mV @ 100 A | 1 mA @ 20 V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |||||||||||||||||||||||
| DB101G | GeneSiC Semiconductor | 0.2000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | DB101 | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB | Active | Standard | 50 V | Single Phase | 1 A | 1.1 V @ 1 A | 5 µA @ 50 V | ||||||||||||||||||||||||
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G2R1000MT17J | GeneSiC Semiconductor | 7.0800 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G2R™ | download | GeneSiC Semiconductor | G2R1000 | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-7 | 54W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 139 pF @ 1000 V | 1700 V | - | 3A (Tc) | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 20V | +20V, -10V | ||||||||||||||||||
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G3R450MT17J | GeneSiC Semiconductor | 8.8500 |
Min: 1 Mult: 1 |
0.00000000 | Tube | G3R™ | download | GeneSiC Semiconductor | G3R450 | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-7 | 91W (Tc) | Active | SiCFET (Silicon Carbide) | N-Channel | 454 pF @ 1000 V | 1700 V | - | 9A (Tc) | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | 15V | ±15V | |||||||||||||||||
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GA10SICP12-247 | GeneSiC Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 1.2 kV | Tube | - | - | download | GeneSiC Semiconductor | - | Through Hole | TO-247-3 | 10 A | Obsolete | - | |||||||||||||||||||||||||||
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GBPC2508W | GeneSiC Semiconductor | 4.2000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBPC2508 | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W | Active | Standard | 800 V | Single Phase | 25 A | 1.1 V @ 1.2 A | 5 µA @ 800 V | |||||||||||||||||||||||
| GBU8M | GeneSiC Semiconductor | 1.7300 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | GBU8 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU | Active | Standard | 1 kV | Single Phase | 8 A | 1.1 V @ 8 A | 5 µA @ 1000 V | ||||||||||||||||||||||||
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KBP206G | GeneSiC Semiconductor | 0.2300 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | KBP206 | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP | Active | Standard | 600 V | Single Phase | 2 A | 1.1 V @ 2 A | 10 µA @ 600 V | |||||||||||||||||||||||
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MBRT20060R | GeneSiC Semiconductor | 102.9600 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | - | download | GeneSiC Semiconductor | MBRT20060 | Chassis Mount | Three Tower | Three Tower | Active | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60 V | 800 mV @ 100 A | 1 mA @ 20 V | -55°C ~ 150°C | 1 Pair Common Anode | 100A |
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