TP65H035G4WS

Mfr

Transphorm

Series

-

Package

Tube

Product Status

Active

FET Type

N-Channel

Technology

GaNFET (Cascode Gallium Nitride FET)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

46.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

22 nC @ 0 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500 pF @ 400 V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Base Product Number

TP65H035