Inventchip(21)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Package | Series | Datasheet | Mfr | Operating Temperature | Mounting Type | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Reverse Recovery Time (trr) | Product Status | Speed | Rise / Fall Time (Typ) | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Channel Type | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IV1D12040U2 | Inventchip | 29.7200 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | Inventchip | Through Hole | TO-247-2 | TO-247-2 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.8 V @ 40 A | 200 µA @ 1200 V | -55°C ~ 175°C | 1 Pair Common Cathode | 102A (DC) | ||||||||||||
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IVCR1401DPR | Inventchip | 2.8100 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | - | Inventchip | -40°C ~ 125°C (TA) | Surface Mount | 19V ~ 25V | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Active | 13ns, 13ns | Single | Low-Side | 1 | IGBT, SiC MOSFET | 1.7V, 1.6V | 4A, 4A | ||||||||||||
 |
IVCR1401DR | Inventchip | 2.6600 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | - | Inventchip | -40°C ~ 125°C (TA) | Surface Mount | 19V ~ 25V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Non-Inverting | Active | 13ns, 13ns | Single | Low-Side | 1 | IGBT, SiC MOSFET | 1.7V, 1.6V | 4A, 4A | ||||||||||||
 |
IVCR1407SR | Inventchip | 1.5700 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | - | Inventchip | -40°C ~ 125°C (TA) | Surface Mount | 4.5V ~ 20V | SC-74A, SOT-753 | SOT-23-5 | Inverting, Non-Inverting | Active | 6ns, 6ns | Single | Low-Side | 2 | IGBT, N-Channel MOSFET | - | 4A, 4A | ||||||||||||
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IVCR2401DPR | Inventchip | 1.5700 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | - | download | Inventchip | -40°C ~ 125°C (TA) | Surface Mount | 8V ~ 20V | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Active | 13ns, 13ns | Independent | Low-Side | 2 | N-Channel, P-Channel MOSFET | 1.7V, 1.6V | 4A, 4A | |||||||||||
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IVCR2405DR | Inventchip | 3.3700 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | - | Inventchip | -40°C ~ 125°C (TA) | Surface Mount | 4.5V ~ 20V | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Inverting, Non-Inverting | Active | 6ns, 6ns | Independent | Low-Side | 2 | IGBT, N-Channel MOSFET | - | 4A, 4A | ||||||||||||
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IV1D12020T3 | Inventchip | 19.1700 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | Inventchip | Through Hole | TO-247-3 | TO-247-3 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.8 V @ 20 A | 100 µA @ 1200 V | -55°C ~ 175°C | 1 Pair Common Cathode | 30A (DC) | ||||||||||||
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IV1D12030U3 | Inventchip | 25.4800 |
Min: 1 Mult: 1 |
0.00000000 | Tube | - | download | Inventchip | Through Hole | TO-247-3 | TO-247-3 | 0 ns | Active | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200 V | 1.8 V @ 15 A | 80 µA @ 1200 V | -55°C ~ 175°C | 1 Pair Common Cathode | 44A (DC) |
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